LD13 – Numerical Analysis of Electrically Pumped SiGeSn/GeSn Quantum Well Transistor Laser
The threshold current density of electrically pumped Sn incorporated group IV alloy based transistor laser (TL) is analyzed by proposing and designing a theoretical model for the same. Active region for the lasing action is formed by strain compensated GeSn single quantum well (QW) in the base of the transistor. The threshold current density for lasing action is determined with the help of obtained modal and other losses, and calculated material gain. The obtained threshold current density in the range of 2-3 kA/cm2 indicates that design of purely group-IV material based TL is viable and realistic.
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