Invited presentations

LD02 – Microscopic modeling of interface roughness scattering and application to the simulation of quantum cascade lasers

Grange T., Mukherjee S., Capellini G., Montanari M., Persichetti L., Di Gaspare L., Birner S., Attiaoui A., Moutanabbir O., Virgilio M., De Seta M.

The theory of interface roughness (IFR) scattering in semiconductor heterostructures is well established in the case of idealized abrupt interfaces. However, in reality, interfaces have a finite width, i.e. interfaces are graded. In such case, the effect of interface roughness, i.e. the breaking of in-plane invariance, a general framework has been lacking to describe the […]

LED01 – First-principles computation of charge-carrier recombination coefficients in optoelectronic materials

Zhang X.

Charge-carrier recombination plays a decisive role in determining the efficiency of optoelectronic materials and devices, but their accurate experimental measurements and interpretation are challenging. In this context, first-principles computation of charge-carrier recombination coefficients is particularly useful. It allows not only rigorous computation of the recombination rates, but also intuitive interpretation of the microscopic recombination mechanisms […]

MM01 – Rigorous modal analysis of micro or nanoresonators

Lalanne P.

The most general motion of a system is a superposition of its normal modes, or eigenstates. We report our recent developments of a rigorous modal analysis of electromagnetic resonators, which is accurate even for geometries that have not been analyzed so far, e.g. 3D resonators made of dispersive media and placed in non-homogeneous backgrounds (on […]

NM01 – Machine Learning Assisted Material and Device Parameter Extraction From Measurements Of Thin Film Semiconductor Devices

Knapp E., Battaglia M., Jenatsch S., Ruhstaller B.

The simulation of thin film semiconductor devices is challenging, partly due to the unknown material and device parameters. In this contribution, we present two different approaches to determine the missing material and device parameters from measurements. They both have in common that they are based on machine learning (ML) and numerical models. First, a numerical […]

P01 – Continuous-Wave Second-Harmonic Generation in Orientation-Patterned Gallium Phosphide Waveguides at Telecom Wavelengths

Pantzas C., Combrié S., De Rossi A., Léger Y., Grisard A., Sagnes I.

A new process to produce Orientation-Patterned Gallium Phosphide (OP-GaP) on GaAs with almost perfectly parallel domain boundaries is presented. Taking advantage of the chemical selectivity between phosphides and arsenides, OP-GaP is processed into suspended shallow-ridge waveguides. Efficient Second-Harmonic Generation from Telecom wavelengths is achieved in both Type-I and Type-II polarisation configurations. The highest observed conversion […]