D01 – Non-Uniform Time-Stepping For Fast Simulation of Photodetectors Under High-Peak-Power, Ultra-Short Optical Pulses

Simsek E., Anjum I. Md, Carruthers T. F., Menyuk C. R.

A novel non-uniform time-stepping procedure is developed to reduce the memory usage and simulation time—by two orders of magnitude—of photodetectors when detecting high-peak-power, ultra-short optical pulses. The proposed procedure can be used in other marching-on-in-time solvers to achieve the same for the simulations dealing with ultra-short pulses.

D02 – Electro-Optical Simulation and Characterization of DCR and secondary emission in SPADs

Novakovic B., Raymond K., Gallina G., Xie L., Retiere F., McGuire D.

We demonstrate the use of simulations in the modeling and characterization of important aspects of Single Photon Avalanche Detectors (SPADs). Electrically, we discuss the use of drift-diffusion and avalanche triggering probability solvers and results for dark count rate (DCR) and their comparison to measurements. Optically, we discuss the use of full wave electromagnetic solvers to […]

D03 – 3D multiphysics transient modeling of vertical Ge-on-Si pin waveguide photodetectors

Alasio M. G. C., Franco P., Tibaldi A., Bertazzi F., Namnabat S., Adams D., Gothoskar P., Masini G., Forghieri F., Ghione G., Goano M.

We report transient simulations of Ge-on-Si vertical pin waveguide photodetectors (WPDs), where the optical generation term used by the time-domain model is the FDTD solution of the electromagnetic problem treated as a spatially-distributed pulsed signal. This approach, validated against experimental measurements of the frequency response, paves the way to future studies of the dynamic response […]

D04 – Numerical simulation on the dependence of photoresponse on the thickness of the charge layer for GaN SAM avalanche photodiodes

Wang X., Wang M., Cui H., Wang Z., Chen Y., Ma W.

GaN avalanche photodiode (APD) has important application prospects in the field of solar-blind ultraviolet (UV) detections. The back-illuminated GaN-based detector has been widely studied due to the advantages such as easy integration with readout circuit. Numerical model of GaN APD is established. The influence of the key function layer (charge layer) thickness on the device […]

D06 – Examination of Resonant Cavity Enhanced Strain Compensated SiGeSn/GeSn Interband MQWIP

Pareek P., Singh L., Ranjan R., Malviya N., Agarwal V.

In this work, mathematical investigation is done for the potential of Group IV alloy based resonant cavity enhanced interband multiple quantum well photodetector (MQWIP). Strain balanced multiple quantum well structure is proposed to be configured between two Bragg reflectors (mirrors) to form a resonant cavity. Responsivity is calculated by solving the rate equation in each […]

D08 – Numerical Simulation on the Effect of Operation Temperature on the Optical Transfer Characteristics for GaN/AlGaN SAM Avalanche Photodiodes

Wang M., Wang Z., Wang X., Cui H., Chen Y., Ma W.

GaN/AlGaN avalanche photodiodes (APDs) have important application values and broad application potentials in the field of solar-blind ultraviolet (UV) detection. However, the self-heating effect has an obvious influence on the output characteristics of GaN/AlGaN APDs. In order to study the influence of self-heating temperature on its performance, the numerical model of GaN/AlGaN APDs is established […]

D09 – Analysis of Differential Phase Shift Quantum Key Distribution using single-photon detectors

Sharma V., Bhardwaj A.

We investigated the performance of differential phase shift quantum key distribution using InGaAs/InP and Silicon-APD (avalanche photo diode) for generating secure keys, secure communication distance, and bit error rates under the various operating conditions.We compare the quantum bit error rate and the secure key generation rate as a function of communication length.Our simulation results show […]

IS01 – Network Authentication with Synchronized Chaotic Lasers

Lombardi L., Annovazzi-Lodi V., Aromataris G.

We numerically study a hardware method for network authentication, where a pair of matched (twins) chaotic lasers generate the same chaos when they synchronize, being subject to the same optical injection from a third chaotic laser. One of the lasers is in the secure environment, the other in the unsecure environment, and authorization is granted […]

IS02 – Exploring modern alternatives to the Whittaker-Shannon-Nyquist sampling theorem in THz Spectroscopy

Andersen C. D., Noura J. A. S., Mølvig B. H., Garcia O. G., Lange S. J.

We present simulations for a THz cross-correlation spectroscopy (THz-CCS) optical system. The aim is using compressed sensing (CS) to reconstruct the THz signal from a random under sampling of the signal and potentially replacing a delay stage unit of the THz-CCS system to increase robustness and cost-effectiveness of the optical system. We present results from […]

IS04 – All-optical AND Logic Gate Based on Semiconductor Optical Amplifiers for Implementing Deep Recurrent Neural Networks

Alam B., Ceschini A., Rosato A., Panella M., Asquini R.

The development of optical logic gates is a key factor for enabling next generation of computations in the context of Deep Learning and Quantum Computing. In this work, we introduce a scheme for the implementation of an all-optical AND logic gate, which makes use of semiconductor optical amplifiers (SOA) in cross-phase modulation configuration combined with […]

IS05 – Thermal crosstalk mitigation in a dual-drive Mach-Zehnder Modulator

De S., Das R., Singh K., Mandalawi Y., Kleine-Ostmann T., Schneider T.

Dual-drive, PIN-diode based Mach-Zehnder modulators are pivotal for power-efficient and cost-effective CMOS compatible optical transceivers with small footprints. However, the basic chip materials have substantial thermal conductance resulting in thermal crosstalk, which eventually deteriorates the modulator performance in terms of bandwidth and data transmission capabilities. In this work, we simulate and analyze the influence of […]

IS08 – Flat-band 8-Channel Optical MUX/DeMUX for Long Reach 400GbE Applications

Jeong S.-H.

We propose novel optical demultiplexer scheme for LR-8 applications, and theoretically verify flatband spectral response with the discrete 8-channel wavelengths. By the additional band rejection filter, non-continuous wavelength filtering response was achieved with spectral flatness and low crosstalk of < -15dB within an entire LR-8 targeted spectral range.

IS10 – Modelling and Characterisation of Silicon Waveguides in Photonic Integrated Circuits

Ljubotina M., Topič M., Krč J.

Modelling and characterization of basic waveguiding structures in integrated photonics is important due to the large variety of established and emerging technologies used for fabrication. In this contribution we present a modelling and characterization approach for integrated silicon waveguides. We provide waveguide characteristics calculated from eigenmode simulation and optical measurement results.

IS11 – Numerical Investigation of the Performance of OAM-Mode Shifting Recirculating Delay Loop Under the Effect of Mode Shifter Displacement

Almaiman A.

We investigate the effect of OAM mode shifter displacement on the performance of the OAM-mode shifting recirculating delay loop by simulating the beam propagation using Kirchhoff-Fresnel diffraction. Simulation results indicate that 20 delayed replicas may be obtained with >10 dB signal-to-crosstalk ratio (SCR) if alignment is perfect and ℓshift=+1

IS12 – A compact Kerr effect based Plasmonic Logic Device for Nanotechnology Applications

Singh L., Pareek P., Dixit A., Agarwal V.

This work utilizes the vital property of Kerr effect of altering the phase of optical signal to numerically investigate the plasmonic XOR/XNOR logic device for nanotechnology applications. Extinction ratio (ER) and insertion loss (IL) of basic switching element (Mach-Zehnder interferometer) is evaluated and plotted as a function of length of interferometric arms. The obtained result […]

IS13 – Design and Performance Analysis of All Optical Half Adder based on Carrier Reservoir SOA -Mach Zehnder Interferometer (MZI) Configuration

Agarwal V., Pareek P., Singh L., Chaurasia V.

In this manuscript, Carrier reservoir SOA (CR-SOA) based half adder is proposed and simulated at 100 Gb/s. CR-SOA has fast carrier recovery, due to presence carrier reservoir which enables its use at higher data rates on the other hand conventional SOA suffers from slow carrier recovery which leads to unequal amplification of pulses. The obtained […]

IS14 – Tunable optical mode converter based on SOI asymmetric channel waveguides

Younis B. M., Esamil M. S. M., Hameed M. F. O., Obayya S. S. A.

An optical mode converter based on asymmetric dual channel waveguides is reported and analyzed. The first channel is infiltrated with nematic liquid crystal (NLC) material while the second one has BK7 glass core. The first higher order mode of the NLC core is coupled to the fundamental mode of the neighboring core with high coupling […]

IS15 – Inverse Hyperbolic-Tangent Pre-distortion for OOFDM Systems

Alzoubi S., Shehata M.

We propose an inverse hyperbolic-tangent-based digital pre-distorter that can suppress the Mach-Zehnder modulator-induced harmonic distortions by about 13 dB for single-tone signals, while maintaining the peak-to-average power ratio in optical orthogonal frequency division multiplexed signals.

LD02 – Microscopic modeling of interface roughness scattering and application to the simulation of quantum cascade lasers

Grange T., Mukherjee S., Capellini G., Montanari M., Persichetti L., Di Gaspare L., Birner S., Attiaoui A., Moutanabbir O., Virgilio M., De Seta M.

The theory of interface roughness (IFR) scattering in semiconductor heterostructures is well established in the case of idealized abrupt interfaces. However, in reality, interfaces have a finite width, i.e. interfaces are graded. In such case, the effect of interface roughness, i.e. the breaking of in-plane invariance, a general framework has been lacking to describe the […]

LD04 – Modeling carrier transport in mid-infrared VCSELs with type-II superlattices and tunnel junctions

Torrelli V., Montoya J. A. G., Tibaldi A., Debernardi P., Simaz A., Belkin M. A., Goano M., Bertazzi F.

Vertical-cavity surface-emitting lasers are promising light sources for sensing and spectroscopy applications in the midinfrared 3 ÷4 µm spectral region. A type-II superlattice active region is used for carrier injection and confinement, while a buried tunnel junction defines a current aperture, decreasing the series resistivity. Highly nanostructured to optimize device performance, mid-infrared VCSELs pose modeling […]

LD05 – Data-Driven Modeling of Non-Markovian Noise in Semiconductor Lasers

Mertenskötter L., Kantner M.

Non-Markovian noise degrades the coherence properties of semiconductor lasers and contributes significantly to broadening of the linewidth. Since modeling of such colored noise systems from first principles is not accessible, we aim for a data-driven modeling approach in which a system of stochastic rate equations shall be reconstructed from time series data.

LD06 – Relative intensity noise of injection-locked epitaxial quantum dot laser on silicon

Chu Q., Zhao S., Grillot F., Wang J., He F., Zhang M., Xu X., Yao Y., Duan J.

This work investigates the relative intensity noise (RIN) characteristics of quantum dot (QD) lasers epitaxially grown on silicon subject to the optical injection. The effect of threading dislocation (TD), which acts as nonradiative recombination centers in the Shockley-Read-Hall (SRH) process, is considered in the rate equation model. The results reveal that the RIN is enhanced […]

LD07 – Physics-based time-domain modeling of VCSELs

D’Alessandro M., Gullino G., Tibaldi A., Bertazzi F., Goano M., Debernardi P.

This paper presents the results of a physics-based time-domain simulator for a vertical-cavity surface-emitting laser (VCSEL). We implemented a trapezoidal rule second order backward differentiation formula (TR-BDF2) to simulate the large signal response of the device under investigation, including the parasitic effects of the pin junction arising from an interplay of optical and carrier transport […]

LD08 – Modeling of THz Comb Emission in Difference-Frequency Quantum Cascade Lasers

Popp J., Seitner L., Schreiber M., Haider M., Consolino L., Cappelli F., De Natale P., Fujita K., Jirauschek C.

The generation of terahertz (THz) frequency comb emission by intracavity difference frequency generation (DFG) in a mid-infrared (mid-IR) quantum cascade laser (QCL) is a promising alternative to direct THz QCL frequency comb generation. Concerning their room temperature operation capabilities, these devices are well suited for applications in rotational molecular spectroscopy and sensing. In order to […]

LD10 – Effect of Self-Phase Modulation on The Signal Quality of Fourier Domain Mode-Locked Lasers

Aşırım O. E., Huber R., Jirauschek C.

In this paper, the impact of self-phase modulation on the noise performance of Fourier Domain Mode-Locked (FDML) lasers is investigated. It is shown that under a relatively high fiber nonlinearity and/or intracavity signal amplitude, an excess amount of noise generation occurs, which can not only lead to poor signal quality, but also operational instability. Hence, […]

LD12 – Study of reflectivity and resistance properties of p-type distributed Bragg reflectors with composition graded interfaces

Cheng L., Yang D., Yao S.

In this work, the reflectivity and series resistance of the p-type distributed Bragg reflectors (DBRs) in vertical cavity surface emitting lasers (VCSELs) under the different thickness of composition graded interface layers, Al composition of the high Al composition layers, Al composition of the low Al composition layers, and the number of DBR periods are simulated […]

LD13 – Numerical Analysis of Electrically Pumped SiGeSn/GeSn Quantum Well Transistor Laser

Ranjan R., Pareek P., Malviya N.

The threshold current density of electrically pumped Sn incorporated group IV alloy based transistor laser (TL) is analyzed by proposing and designing a theoretical model for the same. Active region for the lasing action is formed by strain compensated GeSn single quantum well (QW) in the base of the transistor. The threshold current density for […]

LD15 – Design Analysis of Linear Graded Quantum barriers in Ultravoilet-C Laser Diodes

Ali S., Usman M., Saeed S.

We demonstrated ultraviolet laser diode with improved optical and electrical features. By employing linear graded rising aluminium concentration in phases from first quantum barrier to last quantum barrier, the suggested LD design improves internal quantum efficiency (IQE) and output power while minimizing the lasing threshold. The proposed LD increases optical gain while lowering carrier leakage […]

LED01 – First-principles computation of charge-carrier recombination coefficients in optoelectronic materials

Zhang X.

Charge-carrier recombination plays a decisive role in determining the efficiency of optoelectronic materials and devices, but their accurate experimental measurements and interpretation are challenging. In this context, first-principles computation of charge-carrier recombination coefficients is particularly useful. It allows not only rigorous computation of the recombination rates, but also intuitive interpretation of the microscopic recombination mechanisms […]

LED02 – Carrier Transport in Multi Colour Deep Ultraviolet Light Emitting Diodes

Hofmann G., Höpfner J., Schilling M., Muhin A., Römer F., Wernicke T., Kneissl M., Witzigmann B.

Deep ultraviolet (DUV) light emitting diodes (LEDs) and lasers are enabled by high band gap Aluminium Gallium Nitride (AlGaN). The efficiency of recent multi quantum well (MQW) DUV emitters is still in the percent range which can be in part attributed to the hole injection. The hole injection and the carrier distribution in the high […]

LED03 – RGB LED active region design and optimization with Genetic Evolution Algorithm

Mamedov D. V., Kisin M. V., Chuang C.-L., El-Ghoroury H. S.

Multi-quantum-well (MQW) LED is a complex distributed system with strong interaction between two opposite carrier flows, electrons and holes. For both types of carriers, the carrier injection into each QW depends on transport conditions across the whole active region (AR) and is affected by capture-recombination balance in all active QWs. Multi-color LEDs with different types […]

LED04 – Development of time-dependent Exciton diffusion solver for modeling Triplet-Triplet Fusion Mechanism in OLEDs

Huang J.-Y., Hung H.-C., Hsu K.-C., Chen C.-H., Lee P.-H., Lin H.-Y., Lin B.-Y., Leung M.-K., Chiu T.-L., Lee J.-H., Wu Y.-R.

In this work, we developed a both stable and time-dependent exciton diffusion model including singlet and triplet exciton coupled with a modified Poisson & drift-diffusion solver to demonstrate the mechanism of triplet-triplet fusion (TTF) OLEDs. Using this modified simulator, we can demonstrate the characteristics of OLEDs including current-voltage curve, quantum efficiency performance, time-resolved electroluminescence spectrum, […]

LED05 – Reliable prediction of the singlet-triplet gap in TADF molecules with GW/BSE approach

Chaudhuri D., Patterson C. H.

Organic light emitting diode (OLED) molecules that exhibit thermally activated delayed fluorescence (TADF) have emerged as a promising technology for various lighting and display applications. Such systems depend on low singlet-triplet gaps of the order of kT to allow reverse inter-system crossing. Here, we demonstrate the capability of a GW/BSE method to predict excitation energies […]

LED06 – Ray Tracing Simulation of a GaN-based integrated LED-Photodetector System

Amiri P., Casals O., Auf der Maur M., Prades J. D.

An optical sensor system consisting of a pair of GaN LED and Photodetector (PD) is simulated using COMSOL Multiphysics, and the possibility of using this system as absorption coefficient sensor is studied. By locating both LED and PD on a same substrate and measuring transmitted power to the PD, it would be possible to sense […]

LED07 – Effect of Parabolic Quantum Well on Internal Quantum Efficiency of InGaN/GaN based MicroLED at low current density

Gurjar R., Prakash Singh C., Singh Meena A., Ghosh K.

The quantum cascade stark effect (QCSE) in rectangular shaped quantum well (QW) poses a hindrance to increase the internal quantum efficiency (IQE) of nitride based LEDs. To circumvent the said problem for micro-LEDs operating at low current density, a parabolic QW structure has been proposed which is found to be useful to alleviate the QCSE […]

LED08 – Influence of Prestrained Graded InGaN interlayer on the Optical Characteristics of InGaN/GaN MQW-based LEDs

In this work, an InGaN/GaN multi-quantum well light emitting diode is designed with different kinds of prestrain layers (InGaN) inserted between the active region and n-GaN layer to demonstrate the effects of piezoelectric polarization on GaN-based LEDs. The device describes a GaN buffer layer which promotes charge injection by minimizing energy barrier between electrode and […]

LED09 – Enhanced optoelectronic properties of UV-C light-emitting diode

We numerically analyzed proposed structure named as LED S2 in comparison to reference structure LED S1. In LED S2 we introduced undoped AlGaN and p-AlGaN layers between the electron blocking layer (EBL) and the p-GaN (hole injecting layer). The simulation finding shows proposed structure (LED S2) provide a better strategy for lowering electron overflow and […]

MM01 – Rigorous modal analysis of micro or nanoresonators

Lalanne P.

The most general motion of a system is a superposition of its normal modes, or eigenstates. We report our recent developments of a rigorous modal analysis of electromagnetic resonators, which is accurate even for geometries that have not been analyzed so far, e.g. 3D resonators made of dispersive media and placed in non-homogeneous backgrounds (on […]

MM02 – Carrier transport in (In,Ga)N quantum well systems: Connecting atomistic tight-binding electronic structure theory to drift-diffusion simulations

O’Donovan M., Farrell P., Streckenbach T., Koprucki T., Schulz S.

Understanding the impact of the alloy microstructure on carrier transport in (In,Ga)N/GaN quantum well systems is important for aiding device design. We study the impact that alloy fluctuations have on uni-polar carrier transport for both electrons (n-i-n junction) and holes (p-i-p junction) using a multiscale framework. To do so we connect an atomistic tight-binding model […]

MM03 – Implementation of Partially Reflecting Boundary Conditions in the Generalized Maxwell-Bloch Equations

Schreiber M., Popp J., Seitner L., Haider M., Jirauschek C.

Perfectly matched layer (PML) boundary conditions have been used for several decades for the simulation of open domains within the finite difference time domain (FDTD) method. In this paper, we report on a new PML-based partially reflecting boundary condition for the generalized Maxwell-Bloch equations that enables setting a certain value of reflectance R at the […]

MM04 – Simulation of ac conductivity of monolayer MoS2 at terahertz frequencies

Mitra S.,

We present a multiphysics numerical tool for calculating the terahertz (THz) conductivity of transition-metal dichalcogenides (TMDs). The tool combines the ensemble Monte Carlo (EMC) technique for carrier transport with a three-dimensional finite-difference-time-domain (FDTD) solver for electromagnetic fields. We use the coupled EMC–FDTD technique to calculate the frequency-dependent conductivity in the terahertz range for monolayer MoS2, […]

MM05 – Comparison of flux discretizations for varying band edge energies

Moatti J., Farrell P.

Recently, a multiscale framework was developed where drift-diffusion is combined with atomistic tight-binding models. A naive flux discretization was proposed to tackle the problem of heavily fluctuating band edge energies which does not take into account mathematical complications. Here we would like to present several alternatives and compare them.

MM06 – Dual-Potential Finite-Difference Technique for Computational Electrodynamics

, , ,

We present a finite-difference time-domain (FDTD) technique suitable for coupling with quantum-transport solvers. We derive first-order equations for the electric and magnetic vector potentials and the electric scalar potential which, upon the adoption of the Coulomb gauge, decouple into solenoidal and irrotational equation sets and are sourced by the solenoidal and irrotational parts of the […]

MM07 – Volume exclusion effects in perovskite charge transport modeling

Abdel D., Courtier N., Farrell P.

Due to its flexibility, perovskite materials are a promising candidate for many semiconductor devices. For example, Perovskite Solar Cells (PSCs) have become recently one of the fastest growing photovoltaic technologies. In this work, we take volume exclusion effects into account by formulating two different current densities – either treating the mobility or the diffusion as […]

MM08 – Data-driven doping reconstruction

Piani S., Lei W., Heltai L., Rotundo N., Farrell P.

To reconstruct doping profiles via opto-electronic techniques (e.g. LBIC and LPS), we formulate an inverse problem based on the van Roosbroeck system. To solve it, we use neural networks fed with data created from efficient implementations of the forward model. We discuss errors of the reconstructed doping profiles as well as their robustness with respect […]

MM09 – FiPo FDTD: Computational Electrodynamics Technique Producing Both Fields and Potentials

Avazpour L., King M., Belling S., Knezevic I.

We present the field–potential finite-difference time-domain (FiPo FDTD) algorithm, which solves a set of first-order equations for the electric and magnetic fields (E and H), as well as the magnetic vector potential A and the scalar electric potential φ in the Lorenz gauge. We also present the derivation and implementation of a convolutional perfectly matched […]

MM10 – Full-Vectorial Meshfree Finite Cloud Mode Solver for Fused Fiber-Optic Couplers

Wu X., Xiao J.

A novel full-vectorial meshfree finite cloud mode solver is proposed for analysis of fused optic-fiber couplers, in which the curvilinear coordinate mapping technique is used to map a cloud with curved interface onto a unit square. Numerical results are compared with prior analysis using the finite difference method, showing the validity and utility of the […]

N02 – Influence of random alloy fluctuations on the electronic properties of axial In(x)Ga(1−x)N/GaN nanowire heterostructures

Marquardt O., Koprucki T., O’Donovan M., Schulz S., Brandt O.

Compound semiconductor heterostructures such as quantum dots, nanowires, or thin films, are commonly subject to randomly fluctuating alloy compositions if they contain ternary and quaternary alloys. These effects are obviously of an atomistic nature and thus rarely considered in heterostructure designs that require simulations on a continuum level for theory-guided design or interpretation of observations. […]

N03 – Band structures in highly strained 3D nanowires

Hadjimichael Y., Marquardt O., Merdon O., Farrell P.

We mathematically derive a new nonlinear strain model to simulate the conduction and valence bands in highly bent 3D hexagonal nanowires with GaAs core and asymmetric (AlαIn1-α)As stressor. The model is based on a transformation of the 1st Piola-Kirchhoff stress tensor and an appropriate energy functional that captures the dynamics of the induced strain due […]

N04 – An Efficient Workflow of Modeling Single-Nanowire Based Single-Photon Avalanche Detectors

Li Z., Tan H. H., Jagadish C., Fu L.

Single-photon detector (SPD) as an essential building block for detecting and counting photons, plays a fundamental role in quantum technologies. In this work, we propose an efficient workflow of modeling SPDs based on emerging one-dimensional materials, i.e. nanowires, utilizing avalanche breakdown in reverse biased condition. Comparing to another extensively studied platform, superconducting nanowire SPDs, avalanche […]

N05 – Effect of Poole-Frenkel emission on electroluminescence in quantum dot light emitting devices with Nickel Oxide layer

Rani S., Kumar J.

Theoretical analysis of hybrid quantum dot-light emitting devices incorporating CdSe/ZnS core/shell quantum dots and Nickel Oxide (NiO) as hole injection layer (HIL) has been carried out in this work. The replacement of organic HIL such as poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) with solution-processed NiO layer has led to enhancement of current density and luminance in the device by […]

N06 – Numerical simulations of nonparaxial solitons and their interaction dynamics in coupled Helmholtz systems

Tamilselvan K., Govindarajan A.

The role of nonparaxiality provides a fertile ground for fabricating miniaturized nanoscale devices. In this work, we examine the existence of nonparaxial solitons in a dimensionless coupled nonlinear Helmholtz system, allowing the propagation of ultra-broad nonparaxial pulses in a birefringent optical waveguide. We analytically obtain a bright soltion solution by using standard Hirota’s bilinearization method. […]

N07 – DFT investigation of optoelectronic properties of ultra-small C, CN and SiC nanotubes

Takassa R., Elfatouaki F., Farkad O., Hassine O., Choukri O., El Mouncharih A., Ijdiyaou Y., Ibnouelghazi E. A., Abouelaoualim D.

We investigated the optoelectronic properties of ultra-small armchair (3,3) carbon (C), carbon nitride (CN) and silicon cabride (SiC) nanotubes using the density functional theory (DFT). We performed the calculations for two potentials Perdew-Burke-Ernzerhof Generalized Gradient Approximation (PBEGGA) and Tran-Blaha modified Becke-Johnson (TB-mBJ) potential. The results show a semiconducting nature with direct and indirect gap for […]

N08 – Inverse Design of Multilayer Thin film by Deep Neural Network

Kumar P., Mihret F., Mishra A., Shivaleela E. S., Srinivas T.

Inverse Design of TiO2 − SiO2 based multilayer thin film for normal incidence of TM polarized light in visible region by Deep Neural Network is reported. The simulated and the target transmission spectra are closely following.

N09 – Beam shaping using a chain of photonic nanojet induced plasmonics

Photonic nanojet arises from a microcavity leading to high electric field. On the other hand, metal nanoparticles (NPs) lead to high field due to localization in small volumes. In this work, PNJ from an array of cavity induced plasmon resonances has been studied. The sharp profile of the PNJ has been observed by the inclusion […]

NM01 – Machine Learning Assisted Material and Device Parameter Extraction From Measurements Of Thin Film Semiconductor Devices

Knapp E., Battaglia M., Jenatsch S., Ruhstaller B.

The simulation of thin film semiconductor devices is challenging, partly due to the unknown material and device parameters. In this contribution, we present two different approaches to determine the missing material and device parameters from measurements. They both have in common that they are based on machine learning (ML) and numerical models. First, a numerical […]

NM02 – Impact of random alloy fluctuations on the electronic and optical properties of c-plane AlxGa1−xN/AlN quantum wells

Finn R., Schulz S.

We present a theoretical study of the electronic and optical properties of c-plane AlxGa1−xN/AlN quantum wells emitting in the ultraviolet-A (UV-A) to UV-C spectral range. Special attention is paid to the impact of alloy fluctuations on the results. We find that random alloy fluctuations in (Al,Ga)N are already sufficient to cause strong carrier localization effects. […]

NM03 – Simulation of Near-IR and Mid-IR Cascade Raman Microlasers Based on Bismuth-Modified Tungsten-Tellurite Glass

Anashkina E. A., Andrianov A. V.

We theoretically investigate cascade Raman generation in bismuth-modified tungsten-tellurite glass microlasers, for the first time for microcavities based on TeO2 glasses. The calculated results demonstrate the opportunities of CW Raman generation in the near-IR and mid-IR ranges with CW pump at the wavelength of 1.55 μm. The predicted wavelengths are 1.81 µm, 2.17 µm, 2.70 […]

NM06 – Modelling an Acousto-Optic Beam Shaping Device for a DIRCM Laser Laboratory Setup

Keski̇n M. Z., Fi̇gen Z. G., Özdür İ. T.

Directed Infrared Counter Measure (DIRCM) laser laboratory setups are used to mimic the real life DIRCM system and IR heat-seeking missile engagement scenarios in isolated laboratory environments. Typically, the output beam of a mid-infrared (Mid-IR) laser source is modulated in time using an acousto-optic (AO) modulator (AOM). Following the AOM in the optical path, within […]

NM07 – Early Cancer Detection by Plasmonic PCF Sensor

Abdelghaffar M., Gamal Y., Soliman W., Badr Y., Hameed M. F. O., Obayya S. S. A.

Great research work has been studied for cancer detection due to its high death rate. In this paper, a novel design of photonic crystal fiber (PCF) biosensor based on surface plasmon resonance (SPR) is introduced and numerically analyzed for cancer cell detection. Full vectorial finite element method (FVFEM) is used throughout the numerical analysis of […]

NM08 – Silicon-Based Plasmonic Nanoantennas at midinfrared for Gas Sensing Applications

Alsayed A. E., Ghanim A. M., Yahia A., Swillam M. A.

Advanced nanotechnology especially CMOS technology- enables us to re-design the classic antenna in the nanoscale, which can convert propagating optical wavelengths instead of radio and microwave wavelengths into localized energy and vice versa. As a result, sensors may be designed to make sensing molecules with their characteristic vibrational transitions easier. Bowtie silicon nanoantennas are investigated […]

NM09 – Calculation of intersubband absorption in n-doped BaSnO3 quantum wells

Stanojević N., Radovanović J., Vuković N.

In this work we explore novel and promising BaO/BaSnO3 perovskite-oxide quantum well material system which has recently attracted attention due to its many advantages and possible applications in electronic devices. We focus on calculation of intersubband absorption in La-doped BaSnO3 quantum wells and investigate the tuning of absorption spectra with QW thickness and external electric […]

NM10 – One channel tunable bandpass superconducting filter for wavelength selective switching applications in communications systems

Gonzalez Reyes L. E., Segura-Gutierrez L. M., Ordonez J. E., Zambrano G., Reina J. H.

We design and evaluate the performance of optical filters that are built from one-dimensional photonic crystals (PhCs) amenable for integration into optical networks based on wavelength division multiplexing (WDM). The photonic heterostructures comprise the integration of a ferroelectric (BaTiO3), a dielectric (Y2O3), and a critical high-temperature superconductor material (YBa2Cu3O7−X) in between. Such nanosystems can allow […]

NM13-Highly sensitive ring resonator based refractive index sensor for label free biosensing applications

Kundal S., Khandelwal A.

Ring resonator based label free refractive index biosensor is proposed for detecting glucose and hemoglobin concentrations. To improve device sensitivity and Q factor, various parameters of ring resonator are optimized. The designed ring resonator sensor can sense hemoglobin and glucose concentrations with a high sensitivity of 424 nm/RIU and Q factor of 802.

NM14-Mid-infrared optical modulator based on D-shaped PCF

Younis B. M., Yazeed N., Usama E., El-Sayed B., Almoqadem M. H., El-Sonbaty M. A., El-Shawadfy A., Abd-Elaziz A., Mahmoud S., Hameed M. F. O.,

Recently, photonic crystal fibers (PCFs) have become of compelling interest due to their diverse applications, especially in the mid-infrared (mid-IR) wavelength regime. In this work, an optical mid-IR modulator based on D-shaped PCF with germanium-antimony-tellurium (GST) as a phase-changing material (PCM) is presented and analyzed. Because of the phase transition of the GST material between […]

P01 – Continuous-Wave Second-Harmonic Generation in Orientation-Patterned Gallium Phosphide Waveguides at Telecom Wavelengths

Pantzas C., Combrié S., De Rossi A., Léger Y., Grisard A., Sagnes I.

A new process to produce Orientation-Patterned Gallium Phosphide (OP-GaP) on GaAs with almost perfectly parallel domain boundaries is presented. Taking advantage of the chemical selectivity between phosphides and arsenides, OP-GaP is processed into suspended shallow-ridge waveguides. Efficient Second-Harmonic Generation from Telecom wavelengths is achieved in both Type-I and Type-II polarisation configurations. The highest observed conversion […]

P03 – Numerical Simulations on Quantum Noise Squeezing for Soliton-like Pulses in Optical Fiber

Sorokin A. A., Salnikov N. I., Kosareva A. N., Alyukova V. P., Leuchs G.

Generation of light with nonclassical properties, such as squeezed light, has gathered a lot of attention because of possible uses in such areas as quantum state engineering, quantum imaging, continuous variable quantum computing, and detection of gravitational waves. Squeezed light is generally produced by transporting light through a nonlinear medium. One such media is Kerr-nonlinear […]

P04 – Numerical modeling and experimental verification of advanced methods for characterization of broadband optical pulses and optical frequency combs

Andrianov A. V., Anashkina E. A.

We propose novel linear method for measuring ultrafast pulse trains with extremely high pulse repetition rates that are commonly generated in nonlinear microresonators. The method combines single-shot spectral interferometry with the reference pulses and an advanced version of the frequency resolved optical gating algorithm to reconstruct the initially unknown reference pulses.

P05 – Tunable and Compact SiP Quasi-Dichroic Filter with ≥10 dB/nm Roll-Off Across C- & L-bands

Novick A., Wang S., Rizzo A., Parsons R., Jang K., Bergman K.

We report simulated performance for an integrated and compact silicon photonic quasi-dichroic filter with ≥10 dB/nm roll-off and ≥20 dB extinction ratio between pass and stop bands. Additionally, the cutoff wavelength and compensation for fabrication error are each thermally tunable. The functional dichroic bandwidth is ≈80 nm, which spans most practical use cases.

P07 – Low-Cross-Talk Metal-Dielectric-Metal Waveguide Intersections Based on Sodium

Rodriguez-Esquerre V. F., Muzis Sobrinho C. G., Matos Barreto P. P., Malheiros-Silveira G. N.

We analyzed the transmission properties of two plasmonic waveguides crossing by using numerical simulations. The subwavelength width waveguides are composed of sodiumair-sodium. The crossing structure is composed by a compact cross-shaped resonant cavity with a four-fold symmetry. The results demonstrated the feasibility of using sodium as a low loss material for several applications for nanoplasmonic […]

P08 – Tunable Guided-mode resonance filter using Spacetime Periodic Structure

Khorrami Y., Fathi D., Razmjooei N., Rumpf R. C.

We present a tunable planar guided-mode resonance (GMR) filter using time-varying permittivity along grating nanobars. Results show that the effective medium concept in the temporal state is exactly the same as the spatial state. Furthermore, the structure has spatial periodicity to save the resonance peak of the passive GMR in addition to the temporal periodicity […]

P09 – 120° Hybrid for Bimodal Interferometers

An 120° hybrid for bimodal interferometers in the 220 nm silicon-on-insulator technology is presented. Three output signals enable an unambiguous phase detection over a 360°-range as well as a constant sensitivity. The length of the hybrid is only 190 µm with a simulated excess loss of 0.16 dB. Measurements combined with digital signal processing verify […]

P10 – Ultraviolet and Infrared Blocking Meta-glasses for Electric Vehicles

Chowdhary A.K., Bhowmik T., Gupta J., Sikdar D.

The air-conditioning systems installed in electric vehicles (EVs) consume a significant portion of battery power, thus, limiting EVs’ operating mileage. A design of an automobile windshield that can passively control the heat and light transmitted through it, could improve EV’s performance by reducing the need for air-conditioning. Here, we present a ‘meta-glass’ coating design that […]

P11 – Numerical Study of Stimulated Brillouin Scattering in Optical Microcavities Made of Telecommunication Fibres

Kosareva A., Alyukova V., Salnikov N., Kalinin N.

We numerically studied stimulated Brillouin scattering processes up to the 5th order is microcavities with various realistic diameters and Q-factors made of standard telecommunication fibres. Pump power thresholds were simulated for different parameters of the system. The  larger the microcavity and lower Q-factors, the higher pump power thresholds are. It is also shown that thresholds […]

P12 – Design and Simulation of Temperature Sensors Based on Thermo-Optical WGM Shifts in Silica and Non-Silica Glass Microcavities

Marisova M. P., Andrianov A. V., Anashkina E. A.

Sensing applications of dielectric microcavities with whispering-gallery modes (WGMs) have been actively studied in the recent years. Here we investigated theoretically temperature microsensors based on different glasses, including common silica glass, as well as special germanate, tungsten-tellurite, arsenic sulfide and arsenic selenide glasses. We developed numerical model describing sensing characteristics of the considered microcavities. We […]

P13 – Genetic algorithm optimization of infrared plasmonic absorbers

Souza Bezerra D., Rodriguez-Esquerre V. F.

The absorption of a multiband absorber based on a periodical plasmonic grating has been optimized. The optical and geometrical parameters of the plasmonic structure which is composed of germanium and gold are determined by an efficient genetic algorithm. The electromagnetic response of the absorber is numerically obtained by using the frequency domain finite element method. […]

P14 – Dynamically tunable Graded Index Photonic Crystal lens based on Dirac semimetal

Panahianfar P., Rezaei B.

In this paper, we design a graded-index photonic crystal based on Dirac semimetals and simulate the light propagation in the proposed structure using two-dimensional finite-difference time-domain method. The numerical results indicate that the designed GRIN PC has focusing capability for incident light at terahertz frequency range, and its focal distance can be tuned through changing […]

P15 – Numerical simulation of silicon grating-based plasmonic sensor

Kumar Pandey A., Kumar H.

This work reports on the application of silicon grating-enabled nanostructure for refractive index sensing application in the near-infrared region. This grating helps in launching the plasmon modes efficiently towards the flat metal film deposited with a thin Al2O3 layer. The normal incidence light is used which can be helpful for its integration with optical fiber. […]

P16 – Plasmonic Dual D-shaped PCF Sensor for Low Refractive Index Applications

Gamal Y., Younis B. M., Hameed M. F. O., Obayya S. S. A.

Dual D-shaped (DD-shaped) plasmonic photonic crystal fiber (PCF) for refractive index sensing is designed and analyzed. In the proposed design, two gold nano-rods are attached to the two etched surfaces of the PCF to enhance the sensing characteristics. The surface plasmon (SP) modes excited at the metal/dielectric interfaces are strongly coupled to the PCF core […]

P17 – Simulation Analysis of Microring Resonator in Mobius Topology

Katti R., Prince S.

In this paper, a microring resonator in Mobius topology is modelled and simulation analysis is carried out. The free spectral range of this silicon-on-insulator based photonic device is found to be 23.4 nm. This structure of microring resonator finds place in various applications such as sensors, polarization analysis, wavelength-selective reflectors.

P18 – The counter-propagating traveling-wave technique for optimizing a continuous-wave fiber laser presenting excited state absorption

Barmenkov Y. O., Aboites V., Minguela-Gallardo J. A.

We report results of simulation of a continuous-wave fiber laser with active medium presenting an excited state absorption. The laser was simulated using the counterpropagating traveling-wave technique with taking into account two laser waves propagating along the laser cavity in opposite directions, two waves of amplified spontaneous emission, and exited state absorption observed for both […]

P19 – Numerical Assessment of Bloch Surface Wave 1D-PhC Sensor using Ba2NaNb5O15 Defect Layer

Sagar K., Kumar A.

In this paper, a top defective layer of Barium sodium niobate (Ba2NaNb5O15) material of nanometer range thickness is used to confine Bloch surface mode at the upper interface of the proposed structure. For a 1275 nm operating wavelength, the structural characteristics are intended to stimulate a BSW at the top interface. Wavelength interrogation, angle interrogation, […]

P20 – Simulation of Optical Planar Waveguide Sensor for Microplastics Detection in Water

Razali N. M., Saris N. N. H.

Nowadays, microplastics pollution has become a global concern as it endangers the ecology, marine animals, and cause health threats to human beings. This paper attempted to simulate an optical planar waveguide sensor for microplastics detection in water via Wave Optics Module-COMSOL Multiphysics®. The analyte refractive index was ranged from 1.4800 to 1.5000 RIU, in reference […]

P21 – Numerical investigation of optical bistability in inhomogeneous PT -symmetric gratings

Sudhakar S., Vignesh Raja S., Govindarajan S.

Customizing the nonlinear profile along the direction of propagation helps in the realization of low-power all-optical switches. The switching intensities are extremely low (<0.01) in the broken regime provided that the light launching direction is right. It is believed that the switching intensities in the broken regime are always higher than that of the unbroken […]

P23 – Nanoplasmonic Ultra Compact, Low Insertion Loss UWB Band-Pass Filter Using Square Ring Resonators

Thirupathaiah K., Rao L. K., Boda R.

This article presents the design and analysis of a nanoplasmonic ultra wide band (UWB) band-pass filter based on metal insulator metal (MIM) slot-waveguide using three square ring resonators (SRRs) for obtaining ultra wide band nature at optical frequencies. This filter shows the low insertion loss due to the zero coupling gaps and no mismatch between […]

SC01 – Built-in electric field in irregular morphologies of bulk-heterojunction solar cells

Flores-Contreras I. C., Cabrera-Arenas V., Reséndiz-Mendoza L. M.

This paper theoretically analyzes the built-in electric field distribution in bulk heterojunction solar cells. The approach proposed leads to explore the impact of regular and irregular morphologies on the performance of these devices. The width of the depletion region at the donor-acceptor interface is set by the doping concentration. The proposed analysis resulted in the […]

SC03 – Simulation and Optimization of Nano-structured Gratings Alternative of Thin-film Anti-Reflectors for GaAs Solar Cells Conversion Efficiency Improvement

Das N., Sharma A., Khairul Basar M., Nur-E-Alam M.

Modern civilization demands energy, and the energy demand is increasing almost every day all over the world. The dependency on conventional energy resources including fossil fuel, oil, gas, coal etc. are not in favor of having sustainable global earth. For this reason, renewable or clean energy is one only option while acquiring energy from the […]

SC04 – Performance Evaluation of Lead-Free Cs2CuSbCl6 Perovskite Solar Cells for > 21.67% Efficiency

Kumar A., Thomas M. S., Gupta N., Jain A.

This work investigates the performance of Cs2CuSbCl6-based lead-free perovskite solar cells for photovoltaic applications. Cs2CuSbCl6 has a bandgap of 1.7eV and it is a durable and non-toxic material. Cs2CuSbCl6 can absorb more photons and thus obtain high efficiency. This work has been performed using SCAPS-1D software with the focus on optimizing the absorber layer thickness […]

SC05 – Highly Efficient Dome Shaped Nanowires Solar Cell

El-Bashar R., Hameed M. F. O., Obayya S. S. A.

The optical characteristics of Si dome-tapered nanowires (NWs) solar cell (SC) are reported and analyzed by using finite difference time domain method. The geometrical parameters are studied to maximize the light absorption and hence the ultimate efficiency and short circuit current density of the reported NWs SC. The dome-shaped NWs show better absorption enhancement than […]