Pareek P.

Dept. of Electronics and Communication Engineering, Vishnu Institute of Technology, Vishnupur, Bhimavaram, A.P., India


D06 – Examination of Resonant Cavity Enhanced Strain Compensated SiGeSn/GeSn Interband MQWIP

Pareek P., Singh L., Ranjan R., Malviya N., Agarwal V.

In this work, mathematical investigation is done for the potential of Group IV alloy based resonant cavity enhanced interband multiple quantum well photodetector (MQWIP). Strain balanced multiple quantum well structure is proposed to be configured between two Bragg reflectors (mirrors) to form a resonant cavity. Responsivity is calculated by solving the rate equation in each […]

IS12 – A compact Kerr effect based Plasmonic Logic Device for Nanotechnology Applications

Singh L., Pareek P., Dixit A., Agarwal V.

This work utilizes the vital property of Kerr effect of altering the phase of optical signal to numerically investigate the plasmonic XOR/XNOR logic device for nanotechnology applications. Extinction ratio (ER) and insertion loss (IL) of basic switching element (Mach-Zehnder interferometer) is evaluated and plotted as a function of length of interferometric arms. The obtained result […]

IS13 – Design and Performance Analysis of All Optical Half Adder based on Carrier Reservoir SOA -Mach Zehnder Interferometer (MZI) Configuration

Agarwal V., Pareek P., Singh L., Chaurasia V.

In this manuscript, Carrier reservoir SOA (CR-SOA) based half adder is proposed and simulated at 100 Gb/s. CR-SOA has fast carrier recovery, due to presence carrier reservoir which enables its use at higher data rates on the other hand conventional SOA suffers from slow carrier recovery which leads to unequal amplification of pulses. The obtained […]

LD13 – Numerical Analysis of Electrically Pumped SiGeSn/GeSn Quantum Well Transistor Laser

Ranjan R., Pareek P., Malviya N.

The threshold current density of electrically pumped Sn incorporated group IV alloy based transistor laser (TL) is analyzed by proposing and designing a theoretical model for the same. Active region for the lasing action is formed by strain compensated GeSn single quantum well (QW) in the base of the transistor. The threshold current density for […]