D06 – Examination of Resonant Cavity Enhanced Strain Compensated SiGeSn/GeSn Interband MQWIP
In this work, mathematical investigation is done for the potential of Group IV alloy based resonant cavity enhanced interband multiple quantum well photodetector (MQWIP). Strain balanced multiple quantum well structure is proposed to be configured between two Bragg reflectors (mirrors) to form a resonant cavity. Responsivity is calculated by solving the rate equation in each GeSn active well region of MQWIP considering interwell carrier transport mechanism and resonant cavity. The result reveals that peak responsivity is significantly higher than that of the MQWIP without resonant cavity at 3.8 µm.
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