Oral51 Videos

P17 – Simulation Analysis of Microring Resonator in Mobius Topology

Katti R., Prince S.

In this paper, a microring resonator in Mobius topology is modelled and simulation analysis is carried out. The free spectral range of this silicon-on-insulator based photonic device is found to be 23.4 nm. This structure of microring resonator finds place in various applications such as sensors, polarization analysis, wavelength-selective reflectors.

LD04 – Modeling carrier transport in mid-infrared VCSELs with type-II superlattices and tunnel junctions

Torrelli V., Montoya J. A. G., Tibaldi A., Debernardi P., Simaz A., Belkin M. A., Goano M., Bertazzi F.

Vertical-cavity surface-emitting lasers are promising light sources for sensing and spectroscopy applications in the midinfrared 3 ÷4 µm spectral region. A type-II superlattice active region is used for carrier injection and confinement, while a buried tunnel junction defines a current aperture, decreasing the series resistivity. Highly nanostructured to optimize device performance, mid-infrared VCSELs pose modeling […]

P05 – Tunable and Compact SiP Quasi-Dichroic Filter with ≥10 dB/nm Roll-Off Across C- & L-bands

Novick A., Wang S., Rizzo A., Parsons R., Jang K., Bergman K.

We report simulated performance for an integrated and compact silicon photonic quasi-dichroic filter with ≥10 dB/nm roll-off and ≥20 dB extinction ratio between pass and stop bands. Additionally, the cutoff wavelength and compensation for fabrication error are each thermally tunable. The functional dichroic bandwidth is ≈80 nm, which spans most practical use cases.

LD10 – Effect of Self-Phase Modulation on The Signal Quality of Fourier Domain Mode-Locked Lasers

Aşırım O. E., Huber R., Jirauschek C.

In this paper, the impact of self-phase modulation on the noise performance of Fourier Domain Mode-Locked (FDML) lasers is investigated. It is shown that under a relatively high fiber nonlinearity and/or intracavity signal amplitude, an excess amount of noise generation occurs, which can not only lead to poor signal quality, but also operational instability. Hence, […]

D02 – Electro-Optical Simulation and Characterization of DCR and secondary emission in SPADs

Novakovic B., Raymond K., Gallina G., Xie L., Retiere F., McGuire D.

We demonstrate the use of simulations in the modeling and characterization of important aspects of Single Photon Avalanche Detectors (SPADs). Electrically, we discuss the use of drift-diffusion and avalanche triggering probability solvers and results for dark count rate (DCR) and their comparison to measurements. Optically, we discuss the use of full wave electromagnetic solvers to […]

LD05 – Data-Driven Modeling of Non-Markovian Noise in Semiconductor Lasers

Mertenskötter L., Kantner M.

Non-Markovian noise degrades the coherence properties of semiconductor lasers and contributes significantly to broadening of the linewidth. Since modeling of such colored noise systems from first principles is not accessible, we aim for a data-driven modeling approach in which a system of stochastic rate equations shall be reconstructed from time series data.

NM06 – Modelling an Acousto-Optic Beam Shaping Device for a DIRCM Laser Laboratory Setup

Keski̇n M. Z., Fi̇gen Z. G., Özdür İ. T.

Directed Infrared Counter Measure (DIRCM) laser laboratory setups are used to mimic the real life DIRCM system and IR heat-seeking missile engagement scenarios in isolated laboratory environments. Typically, the output beam of a mid-infrared (Mid-IR) laser source is modulated in time using an acousto-optic (AO) modulator (AOM). Following the AOM in the optical path, within […]

MM09 – FiPo FDTD: Computational Electrodynamics Technique Producing Both Fields and Potentials

Avazpour L., King M., Belling S., Knezevic I.

We present the field–potential finite-difference time-domain (FiPo FDTD) algorithm, which solves a set of first-order equations for the electric and magnetic fields (E and H), as well as the magnetic vector potential A and the scalar electric potential φ in the Lorenz gauge. We also present the derivation and implementation of a convolutional perfectly matched […]

LD07 – Physics-based time-domain modeling of VCSELs

D’Alessandro M., Gullino G., Tibaldi A., Bertazzi F., Goano M., Debernardi P.

This paper presents the results of a physics-based time-domain simulator for a vertical-cavity surface-emitting laser (VCSEL). We implemented a trapezoidal rule second order backward differentiation formula (TR-BDF2) to simulate the large signal response of the device under investigation, including the parasitic effects of the pin junction arising from an interplay of optical and carrier transport […]

N02 – Influence of random alloy fluctuations on the electronic properties of axial In(x)Ga(1−x)N/GaN nanowire heterostructures

Marquardt O., Koprucki T., O’Donovan M., Schulz S., Brandt O.

Compound semiconductor heterostructures such as quantum dots, nanowires, or thin films, are commonly subject to randomly fluctuating alloy compositions if they contain ternary and quaternary alloys. These effects are obviously of an atomistic nature and thus rarely considered in heterostructure designs that require simulations on a continuum level for theory-guided design or interpretation of observations. […]

P01 – Continuous-Wave Second-Harmonic Generation in Orientation-Patterned Gallium Phosphide Waveguides at Telecom Wavelengths

Pantzas C., Combrié S., De Rossi A., Léger Y., Grisard A., Sagnes I.

A new process to produce Orientation-Patterned Gallium Phosphide (OP-GaP) on GaAs with almost perfectly parallel domain boundaries is presented. Taking advantage of the chemical selectivity between phosphides and arsenides, OP-GaP is processed into suspended shallow-ridge waveguides. Efficient Second-Harmonic Generation from Telecom wavelengths is achieved in both Type-I and Type-II polarisation configurations. The highest observed conversion […]

LED05 – Reliable prediction of the singlet-triplet gap in TADF molecules with GW/BSE approach

Chaudhuri D., Patterson C. H.

Organic light emitting diode (OLED) molecules that exhibit thermally activated delayed fluorescence (TADF) have emerged as a promising technology for various lighting and display applications. Such systems depend on low singlet-triplet gaps of the order of kT to allow reverse inter-system crossing. Here, we demonstrate the capability of a GW/BSE method to predict excitation energies […]

NM01 – Machine Learning Assisted Material and Device Parameter Extraction From Measurements Of Thin Film Semiconductor Devices

Knapp E., Battaglia M., Jenatsch S., Ruhstaller B.

The simulation of thin film semiconductor devices is challenging, partly due to the unknown material and device parameters. In this contribution, we present two different approaches to determine the missing material and device parameters from measurements. They both have in common that they are based on machine learning (ML) and numerical models. First, a numerical […]

MM07 – Volume exclusion effects in perovskite charge transport modeling

Abdel D., Courtier N., Farrell P.

Due to its flexibility, perovskite materials are a promising candidate for many semiconductor devices. For example, Perovskite Solar Cells (PSCs) have become recently one of the fastest growing photovoltaic technologies. In this work, we take volume exclusion effects into account by formulating two different current densities – either treating the mobility or the diffusion as […]

LED02 – Carrier Transport in Multi Colour Deep Ultraviolet Light Emitting Diodes

Hofmann G., Höpfner J., Schilling M., Muhin A., Römer F., Wernicke T., Kneissl M., Witzigmann B.

Deep ultraviolet (DUV) light emitting diodes (LEDs) and lasers are enabled by high band gap Aluminium Gallium Nitride (AlGaN). The efficiency of recent multi quantum well (MQW) DUV emitters is still in the percent range which can be in part attributed to the hole injection. The hole injection and the carrier distribution in the high […]