D07 – Theoretical study of back-to-back avalanche photodiodes for mid- and longwave infrared applications

The dual-band N+-p-p-p-P+-p-p-p-n+ avalanche photodiode (APDs) structure is designed and numerically analyzed in detail. We conducted a theoretical study of APD for medium wave (MWIR) and longwave infrared (LWIR) applications. The current-voltage (I-V) characteristics for the bias range -6V 5 m^-1 (x_Cd=0.20) and α_e=3×10⁶ m^-1 (x_Cd=0.33).