In this work, mathematical investigation is done for the potential of Group IV alloy based resonant cavity enhanced interband multiple quantum well photodetector (MQWIP). Strain balanced multiple quantum well structure is proposed to be configured between two Bragg reflectors (mirrors) to form a resonant cavity. Responsivity is calculated by solving the rate equation in each […]
D05 – Mode-Guided Infrared Absorption in Ge/SiO2 Grating for Large-Angle and Broadband Photodetection
The numerical simulation of the electromagnetic properties of the Ge/SiO2 grating structure with bottom distributed Bragg reflector. With mode guiding in Ge, the structure exhibits an absorption angle of 100° and broadband behavior from 1300 to 1500 nm.
D01 – Non-Uniform Time-Stepping For Fast Simulation of Photodetectors Under High-Peak-Power, Ultra-Short Optical Pulses
A novel non-uniform time-stepping procedure is developed to reduce the memory usage and simulation time—by two orders of magnitude—of photodetectors when detecting high-peak-power, ultra-short optical pulses. The proposed procedure can be used in other marching-on-in-time solvers to achieve the same for the simulations dealing with ultra-short pulses.
We investigated the performance of differential phase shift quantum key distribution using InGaAs/InP and Silicon-APD (avalanche photo diode) for generating secure keys, secure communication distance, and bit error rates under the various operating conditions.We compare the quantum bit error rate and the secure key generation rate as a function of communication length.Our simulation results show […]
D04 – Numerical simulation on the dependence of photoresponse on the thickness of the charge layer for GaN SAM avalanche photodiodes
GaN avalanche photodiode (APD) has important application prospects in the field of solar-blind ultraviolet (UV) detections. The back-illuminated GaN-based detector has been widely studied due to the advantages such as easy integration with readout circuit. Numerical model of GaN APD is established. The influence of the key function layer (charge layer) thickness on the device […]
D08 – Numerical Simulation on the Effect of Operation Temperature on the Optical Transfer Characteristics for GaN/AlGaN SAM Avalanche Photodiodes
GaN/AlGaN avalanche photodiodes (APDs) have important application values and broad application potentials in the field of solar-blind ultraviolet (UV) detection. However, the self-heating effect has an obvious influence on the output characteristics of GaN/AlGaN APDs. In order to study the influence of self-heating temperature on its performance, the numerical model of GaN/AlGaN APDs is established […]
We report transient simulations of Ge-on-Si vertical pin waveguide photodetectors (WPDs), where the optical generation term used by the time-domain model is the FDTD solution of the electromagnetic problem treated as a spatially-distributed pulsed signal. This approach, validated against experimental measurements of the frequency response, paves the way to future studies of the dynamic response […]
We demonstrate the use of simulations in the modeling and characterization of important aspects of Single Photon Avalanche Detectors (SPADs). Electrically, we discuss the use of drift-diffusion and avalanche triggering probability solvers and results for dark count rate (DCR) and their comparison to measurements. Optically, we discuss the use of full wave electromagnetic solvers to […]
D07 – Theoretical study of back-to-back avalanche photodiodes for mid- and longwave infrared applications
The dual-band N+-p-p-p-P+-p-p-p-n+ avalanche photodiode (APDs) structure is designed and numerically analyzed in detail. We conducted a theoretical study of APD for medium wave (MWIR) and longwave infrared (LWIR) applications. The current-voltage (I-V) characteristics for the bias range -6V