Zhang M.

State Key Laboratory on Tunable Laser Technology, School of Electronic and Information Engineering, Harbin Institute of Technology, Shenzhen 518055, China

Presentations

LD06 – Relative intensity noise of injection-locked epitaxial quantum dot laser on silicon

Chu Q., Zhao S., Grillot F., Wang J., He F., Zhang M., Xu X., Yao Y., Duan J.

This work investigates the relative intensity noise (RIN) characteristics of quantum dot (QD) lasers epitaxially grown on silicon subject to the optical injection. The effect of threading dislocation (TD), which acts as nonradiative recombination centers in the Shockley-Read-Hall (SRH) process, is considered in the rate equation model. The results reveal that the RIN is enhanced […]