HomeAuthorSchulz S.

Schulz S.

Department of Physics, University College Cork, Cork, T12 YN60, Ireland

Presentations

nusod2022_MM02
MM02 – Carrier transport in (In,Ga)N quantum well systems: Connecting atomistic tight-binding electronic structure theory to drift-diffusion simulations

MM02 – Carrier transport in (In,Ga)N quantum well systems: Connecting atomistic tight-binding electronic structure theory to drift-diffusion simulations

O’Donovan M., Farrell P., Streckenbach T., Koprucki T., Schulz S.

Understanding the impact of the alloy microstructure on carrier transport in (In,Ga)N/GaN quantum well systems is important for aiding device design. We study the impact that alloy fluctuations have on uni-polar carrier transport for both electrons (n-i-n junction) and holes (p-i-p junction) using a multiscale framework. To do so we connect an atomistic tight-binding model […]
158
10
nunsod2022_N03
N02 – Influence of random alloy fluctuations on the electronic properties of axial In(x)Ga(1−x)N/GaN nanowire heterostructures

N02 – Influence of random alloy fluctuations on the electronic properties of axial In(x)Ga(1−x)N/GaN nanowire heterostructures

Marquardt O., Koprucki T., O’Donovan M., Schulz S., Brandt O.

Compound semiconductor heterostructures such as quantum dots, nanowires, or thin films, are commonly subject to randomly fluctuating alloy compositions if they contain ternary and quaternary alloys. These effects are obviously of an atomistic nature and thus rarely considered in heterostructure designs that require simulations on a continuum level for theory-guided design or interpretation of observations. […]
106
6
nusod2022_NM02
NM02 – Impact of random alloy fluctuations on the electronic and optical properties of c-plane AlxGa1−xN/AlN quantum wells

NM02 – Impact of random alloy fluctuations on the electronic and optical properties of c-plane AlxGa1−xN/AlN quantum wells

Finn R., Schulz S.

We present a theoretical study of the electronic and optical properties of c-plane AlxGa1−xN/AlN quantum wells emitting in the ultraviolet-A (UV-A) to UV-C spectral range. Special attention is paid to the impact of alloy fluctuations on the results. We find that random alloy fluctuations in (Al,Ga)N are already sufficient to cause strong carrier localization effects. […]
103
9
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