Rani S.

Dept. of Electronics Engineering Indian Institute of Technology (Indian School of Mines) Dhanbad, Jharkhand

Presentations

N05 – Effect of Poole-Frenkel emission on electroluminescence in quantum dot light emitting devices with Nickel Oxide layer

Rani S., Kumar J.

Theoretical analysis of hybrid quantum dot-light emitting devices incorporating CdSe/ZnS core/shell quantum dots and Nickel Oxide (NiO) as hole injection layer (HIL) has been carried out in this work. The replacement of organic HIL such as poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) with solution-processed NiO layer has led to enhancement of current density and luminance in the device by […]