Marquardt O.

Weierstraß-Institut fur Angewandte Analysis und Stochastik, Leibniz-Institut im Forschungsverbund Berlin e.V., Mohrenstraße 39, 10117 Berlin, Germany


N02 – Influence of random alloy fluctuations on the electronic properties of axial In(x)Ga(1−x)N/GaN nanowire heterostructures

Marquardt O., Koprucki T., O’Donovan M., Schulz S., Brandt O.

Compound semiconductor heterostructures such as quantum dots, nanowires, or thin films, are commonly subject to randomly fluctuating alloy compositions if they contain ternary and quaternary alloys. These effects are obviously of an atomistic nature and thus rarely considered in heterostructure designs that require simulations on a continuum level for theory-guided design or interpretation of observations. […]

N03 – Band structures in highly strained 3D nanowires

Hadjimichael Y., Marquardt O., Merdon O., Farrell P.

We mathematically derive a new nonlinear strain model to simulate the conduction and valence bands in highly bent 3D hexagonal nanowires with GaAs core and asymmetric (AlαIn1-α)As stressor. The model is based on a transformation of the 1st Piola-Kirchhoff stress tensor and an appropriate energy functional that captures the dynamics of the induced strain due […]