Höpfner J.

Technische Universitat Berlin, Institute of Solid State Physics, Hardenbergstraße 36, D-10623 Berlin, Germany

Presentations

LED02 – Carrier Transport in Multi Colour Deep Ultraviolet Light Emitting Diodes

Hofmann G., Höpfner J., Schilling M., Muhin A., Römer F., Wernicke T., Kneissl M., Witzigmann B.

Deep ultraviolet (DUV) light emitting diodes (LEDs) and lasers are enabled by high band gap Aluminium Gallium Nitride (AlGaN). The efficiency of recent multi quantum well (MQW) DUV emitters is still in the percent range which can be in part attributed to the hole injection. The hole injection and the carrier distribution in the high […]