Grillot F.

LTCI, Telecom Paris, Institut Polytechnique de Paris, 91120 Palaiseau, France; Center for High Technology Materials, The University of New-Mexico, Albuquerque, NM 87106, USA

Presentations

LD06 – Relative intensity noise of injection-locked epitaxial quantum dot laser on silicon

Chu Q., Zhao S., Grillot F., Wang J., He F., Zhang M., Xu X., Yao Y., Duan J.

This work investigates the relative intensity noise (RIN) characteristics of quantum dot (QD) lasers epitaxially grown on silicon subject to the optical injection. The effect of threading dislocation (TD), which acts as nonradiative recombination centers in the Shockley-Read-Hall (SRH) process, is considered in the rate equation model. The results reveal that the RIN is enhanced […]