Farrell P.

Weierstrass Institute (WIAS), Mohrenstr. 39, 10117 Berlin, Germany


MM02 – Carrier transport in (In,Ga)N quantum well systems: Connecting atomistic tight-binding electronic structure theory to drift-diffusion simulations

O’Donovan M., Farrell P., Streckenbach T., Koprucki T., Schulz S.

Understanding the impact of the alloy microstructure on carrier transport in (In,Ga)N/GaN quantum well systems is important for aiding device design. We study the impact that alloy fluctuations have on uni-polar carrier transport for both electrons (n-i-n junction) and holes (p-i-p junction) using a multiscale framework. To do so we connect an atomistic tight-binding model […]

MM05 – Comparison of flux discretizations for varying band edge energies

Moatti J., Farrell P.

Recently, a multiscale framework was developed where drift-diffusion is combined with atomistic tight-binding models. A naive flux discretization was proposed to tackle the problem of heavily fluctuating band edge energies which does not take into account mathematical complications. Here we would like to present several alternatives and compare them.

MM07 – Volume exclusion effects in perovskite charge transport modeling

Abdel D., Courtier N., Farrell P.

Due to its flexibility, perovskite materials are a promising candidate for many semiconductor devices. For example, Perovskite Solar Cells (PSCs) have become recently one of the fastest growing photovoltaic technologies. In this work, we take volume exclusion effects into account by formulating two different current densities – either treating the mobility or the diffusion as […]

MM08 – Data-driven doping reconstruction

Piani S., Lei W., Heltai L., Rotundo N., Farrell P.

To reconstruct doping profiles via opto-electronic techniques (e.g. LBIC and LPS), we formulate an inverse problem based on the van Roosbroeck system. To solve it, we use neural networks fed with data created from efficient implementations of the forward model. We discuss errors of the reconstructed doping profiles as well as their robustness with respect […]

N03 – Band structures in highly strained 3D nanowires

Hadjimichael Y., Marquardt O., Merdon O., Farrell P.

We mathematically derive a new nonlinear strain model to simulate the conduction and valence bands in highly bent 3D hexagonal nanowires with GaAs core and asymmetric (AlαIn1-α)As stressor. The model is based on a transformation of the 1st Piola-Kirchhoff stress tensor and an appropriate energy functional that captures the dynamics of the induced strain due […]